IXFN14

IXFN140N30P vs IXFN140N20P vs IXFN140N25T

 
PartNumberIXFN140N30PIXFN140N20PIXFN140N25T
DescriptionMOSFET 140 Amps 300V 0.024 Ohm RdsMOSFET 140 Amps 200V 0.018 RdsMOSFET N-CH 250V 120A SOT-227
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleChassis MountChassis Mount-
Package / CaseSOT-227-4SOT-227-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage300 V200 V-
Id Continuous Drain Current115 A115 A-
Rds On Drain Source Resistance24 mOhms18 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C-
Pd Power Dissipation700 W680 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height9.6 mm12.22 mm-
Length38.2 mm38.23 mm-
SeriesIXFN140N30IXFN140N20-
Transistor Type1 N-Channel1 N-Channel-
Width25.07 mm25.42 mm-
BrandIXYSIXYS-
Fall Time20 ns90 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns35 ns-
Factory Pack Quantity1010-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time100 ns150 ns-
Typical Turn On Delay Time30 ns30 ns-
Unit Weight1.058219 oz1.058219 oz-
Vgs th Gate Source Threshold Voltage-5 V-
Qg Gate Charge-240 nC-
Type-PolarHT HiPerFET Power MOSFET-
Forward Transconductance Min-50 S-
Fabricante Parte # Descripción RFQ
Littelfuse
Littelfuse
IXFN140N30P MOSFET 140 Amps 300V 0.024 Ohm Rds
IXFN140N20P MOSFET 140 Amps 200V 0.018 Rds
IXFN140N20P MOSFET N-CH 200V 115A SOT227B
IXFN140N25T MOSFET N-CH 250V 120A SOT-227
IXFN140N30P MOSFET N-CH 300V 110A SOT-227B
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