PartNumber | IXFK80N200Q | IXFK80N20 | IXFK80N20Q |
Description | MOSFET 80 Amps 200V 0.03 Rds | MOSFET 80 Amps 200V 0.03 Rds | |
Manufacturer | - | IXYS | IXYS |
Product Category | - | Transistors - FETs, MOSFETs - Single | FETs - Single |
Series | - | IXFK80N20 | IXFK80N20 |
Packaging | - | Tube | Tube |
Unit Weight | - | 0.352740 oz | 0.352740 oz |
Mounting Style | - | Through Hole | Through Hole |
Tradename | - | HyperFET | HyperFET |
Package Case | - | TO-264-3 | TO-264-3 |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Configuration | - | Single | Single |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Pd Power Dissipation | - | 360 W | 360 W |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Fall Time | - | 26 ns | 20 ns |
Rise Time | - | 55 ns | 50 ns |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Id Continuous Drain Current | - | 80 A | 80 A |
Vds Drain Source Breakdown Voltage | - | 200 V | 200 V |
Rds On Drain Source Resistance | - | 30 mOhms | 28 mOhms |
Transistor Polarity | - | N-Channel | N-Channel |
Typical Turn Off Delay Time | - | 120 ns | 75 ns |
Typical Turn On Delay Time | - | 40 ns | 26 ns |
Channel Mode | - | Enhancement | Enhancement |