| PartNumber | IXFK150N30P3 | IXFK150N10 | IXFK150N15 |
| Description | MOSFET N-Channel: Power MOSFET w/Fast Diode | MOSFET 150 Amps 100V | MOSFET 150 Amps 150V 0.0125 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 300 V | 100 V | 150 V |
| Id Continuous Drain Current | 150 A | 150 A | 150 A |
| Rds On Drain Source Resistance | 19 mOhms | 12 mOhms | 12.5 mOhms |
| Configuration | Single | Single | Single |
| Tradename | HiPerFET | HyperFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Series | IXFK150N30 | IXFK150N10 | IXFK150N15 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.264555 oz | 0.352740 oz | 0.352740 oz |
| RoHS | - | Y | Y |
| Vgs Gate Source Voltage | - | - | 20 V |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 560 W |
| Channel Mode | - | - | Enhancement |
| Height | - | - | 26.16 mm |
| Length | - | - | 19.96 mm |
| Width | - | - | 5.13 mm |
| Fall Time | - | - | 45 ns |
| Rise Time | - | - | 60 ns |
| Typical Turn Off Delay Time | - | - | 110 ns |
| Typical Turn On Delay Time | - | - | 50 ns |