 |  |  | |
| PartNumber | IXFH7N100P | IXFH7N80 | IXFH7N80Q |
| Description | MOSFET DISCMOSFETN-CH HIPERFET-POLAR | MOSFET 7 Amps 800V | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1 kV | 800 V | - |
| Id Continuous Drain Current | 7 A | 7 A | - |
| Rds On Drain Source Resistance | 1.9 Ohms | 1.4 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 47 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 300 W | 180 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HyperFET | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | - |
| Fall Time | 44 ns | 60 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 49 ns | 40 ns | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 42 ns | 100 ns | - |
| Typical Turn On Delay Time | 25 ns | 35 ns | - |
| RoHS | - | Y | - |
| Packaging | - | Tube | - |
| Height | - | 21.46 mm | - |
| Length | - | 16.26 mm | - |
| Series | - | IXFH7N80 | - |
| Width | - | 5.3 mm | - |
| Unit Weight | - | 0.229281 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Littelfuse |
IXFH7N100P | MOSFET DISCMOSFETN-CH HIPERFET-POLAR | |
| IXFH7N80 | MOSFET 7 Amps 800V | ||
| IXFH7N90Q | MOSFET 7 Amps 900V 1.5W Rds | ||
| IXFH7N100P | MOSFET N-CH | ||
| IXFH7N80Q | Nuevo y original | ||
| IXFH7N90Q | MOSFET 7 Amps 900V 1.5W Rds | ||
| IXFH7N80 | MOSFET 7 Amps 800V |