PartNumber | IXFE34N100 | IXFE39N90 | IXFE36N100 |
Description | MOSFET N-CH 1000V 30A ISOPLUS227 | MOSFET 34 Amps 900V 0.22 Rds | MOSFET 33 Amps 1000V 0.24 Rds |
Manufacturer | - | IXYS | IXYS |
Product Category | - | Module | Module |
Series | - | IXFE39N90 | IXFE36N100 |
Packaging | - | Tube | Tube |
Mounting Style | - | SMD/SMT | SMD/SMT |
Tradename | - | HyperFET | - |
Package Case | - | ISOPLUS-227-4 | ISOPLUS-227-4 |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Configuration | - | Single Dual Source | Single Dual Source |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Pd Power Dissipation | - | 580 W | 580 W |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Minimum Operating Temperature | - | - 40 C | - 55 C |
Fall Time | - | 30 ns | 40 ns |
Rise Time | - | 68 ns | 82 ns |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Id Continuous Drain Current | - | 34 A | 33 A |
Vds Drain Source Breakdown Voltage | - | 900 V | 1000 V |
Rds On Drain Source Resistance | - | 220 mOhms | 240 mOhms |
Transistor Polarity | - | N-Channel | N-Channel |
Typical Turn Off Delay Time | - | 125 ns | 150 ns |
Typical Turn On Delay Time | - | 45 ns | 81 ns |
Channel Mode | - | Enhancement | Enhancement |