PartNumber | IRLR3114ZTRPBF | IRLR3114ZPBF | IRLR3114Z |
Description | MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC | MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC | |
Manufacturer | Infineon | Infineon | IR |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
Id Continuous Drain Current | 130 A | 130 A | - |
Rds On Drain Source Resistance | 5.2 mOhms | 6.5 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
Vgs Gate Source Voltage | 16 V | 16 V | - |
Qg Gate Charge | 40 nC | 40 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 140 W | 140 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Tube | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon / IR | Infineon Technologies | - |
Forward Transconductance Min | 98 S | 98 S | - |
Fall Time | 50 ns | 50 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 140 ns | 140 ns | - |
Factory Pack Quantity | 2000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 33 ns | 33 ns | - |
Typical Turn On Delay Time | 25 ns | 25 ns | - |
Part # Aliases | SP001569142 | SP001568538 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Type | - | HEXFET Power MOSFET | - |