| PartNumber | IRLI630GPBF | IRLI620G | IRLI610ATU |
| Description | MOSFET N-CH 200V HEXFET MOSFET | MOSFET RECOMMENDED ALT 844-IRLI620GPBF | MOSFET 200V N-Channel a-FET Logic Level |
| Manufacturer | Vishay | Vishay | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | N | Y |
| Technology | Si | Si | Si |
| Packaging | Tube | Tube | Tube |
| Brand | Vishay / Siliconix | Vishay / Siliconix | ON Semiconductor / Fairchild |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.084199 oz |
| Mounting Style | - | - | Through Hole |
| Package / Case | - | - | TO-262-3 |
| Number of Channels | - | - | 1 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Id Continuous Drain Current | - | - | 3.3 A |
| Rds On Drain Source Resistance | - | - | 1.5 Ohms |
| Vgs Gate Source Voltage | - | - | 20 V |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 3.1 W |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Height | - | - | 7.88 mm |
| Length | - | - | 10.29 mm |
| Transistor Type | - | - | 1 N-Channel |
| Type | - | - | MOSFET |
| Width | - | - | 4.83 mm |
| Fall Time | - | - | 6 ns |
| Rise Time | - | - | 9 ns |
| Typical Turn Off Delay Time | - | - | 20 ns |
| Typical Turn On Delay Time | - | - | 9 ns |