PartNumber | IRLI630GPBF | IRLI620G | IRLI610ATU |
Description | MOSFET N-CH 200V HEXFET MOSFET | MOSFET RECOMMENDED ALT 844-IRLI620GPBF | MOSFET 200V N-Channel a-FET Logic Level |
Manufacturer | Vishay | Vishay | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | N | Y |
Technology | Si | Si | Si |
Packaging | Tube | Tube | Tube |
Brand | Vishay / Siliconix | Vishay / Siliconix | ON Semiconductor / Fairchild |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.084199 oz |
Mounting Style | - | - | Through Hole |
Package / Case | - | - | TO-262-3 |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | N-Channel |
Vds Drain Source Breakdown Voltage | - | - | 200 V |
Id Continuous Drain Current | - | - | 3.3 A |
Rds On Drain Source Resistance | - | - | 1.5 Ohms |
Vgs Gate Source Voltage | - | - | 20 V |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 3.1 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Height | - | - | 7.88 mm |
Length | - | - | 10.29 mm |
Transistor Type | - | - | 1 N-Channel |
Type | - | - | MOSFET |
Width | - | - | 4.83 mm |
Fall Time | - | - | 6 ns |
Rise Time | - | - | 9 ns |
Typical Turn Off Delay Time | - | - | 20 ns |
Typical Turn On Delay Time | - | - | 9 ns |