IRLHS637

IRLHS6376TR2PBF vs IRLHS6376PBF vs IRLHS6376TR2PBF-CUT TAPE

 
PartNumberIRLHS6376TR2PBFIRLHS6376PBFIRLHS6376TR2PBF-CUT TAPE
DescriptionMOSFET MOSFT DUAL N-Ch 30V 63mOhm 2.5V cpbl
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePQFN-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current3.6 A--
Rds On Drain Source Resistance63 mOhms--
Vgs th Gate Source Threshold Voltage12 V--
Vgs Gate Source Voltage12 V--
Qg Gate Charge2.8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation6.6 W--
ConfigurationDual--
PackagingReel--
Height0.9 mm--
Length2 mm--
Transistor Type2 N-Channel--
Width2 mm--
BrandInfineon / IR--
Forward Transconductance Min8.8 S--
Fall Time9.4 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity400--
SubcategoryMOSFETs--
Typical Turn Off Delay Time11 nS--
Typical Turn On Delay Time4.4 nS--
Part # AliasesSP001550442--
Unit Weight0.017637 oz--
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRLHS6376TRPBF MOSFET 30V 1 N-CH HEXFET 2.8nC
IRLHS6376TR2PBF MOSFET MOSFT DUAL N-Ch 30V 63mOhm 2.5V cpbl
IRLHS6376PBF Nuevo y original
IRLHS6376TR2PBF-CUT TAPE Nuevo y original
IRLHS6376TRPBF-CUT TAPE Nuevo y original
IRLHS6376TRPBF. Transistor Polarity:Dual N Channel, Continuous Drain Current Id:3.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.048ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:800mV, Po
Infineon Technologies
Infineon Technologies
IRLHS6376TR2PBF MOSFET 2N-CH 30V 3.6A PQFN
IRLHS6376TRPBF MOSFET 2N-CH 30V 3.6A PQFN
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