 |  | | |
| PartNumber | IRLD014PBF | IRLD014P | IRLD014PBF. |
| Description | MOSFET N-CH 60V HEXFET MOSFET HEXDI | LOGIC MOSFET N-CHANNEL 60V , ROHS COMPLIANT: NO | |
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | HVMDIP-4 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 1.7 A | - | - |
| Rds On Drain Source Resistance | 200 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 5 V | - | - |
| Qg Gate Charge | 8.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 150 C | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Configuration | Single | Single Dual Drain | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 1.9 S | - | - |
| Fall Time | 26 ns | 110 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 110 ns | 110 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 17 ns | 17 ns | - |
| Typical Turn On Delay Time | 9.3 ns | 9.3 ns | - |
| Series | - | - | - |
| Package Case | - | 4-DIP (0.300", 7.62mm) | - |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | 4-DIP, Hexdip, HVMDIP | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 1.3W | - |
| Drain to Source Voltage Vdss | - | 60V | - |
| Input Capacitance Ciss Vds | - | 400pF @ 25V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 1.7A (Ta) | - |
| Rds On Max Id Vgs | - | 200 mOhm @ 1A, 5V | - |
| Vgs th Max Id | - | 2V @ 250μA | - |
| Gate Charge Qg Vgs | - | 8.4nC @ 5V | - |
| Pd Power Dissipation | - | 1.3 W | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Id Continuous Drain Current | - | 1.7 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Rds On Drain Source Resistance | - | 200 mOhms | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRLD014PBF | MOSFET N-CH 60V HEXFET MOSFET HEXDI | |
| IRLD014P | Nuevo y original | ||
| IRLD014PBF. | LOGIC MOSFET N-CHANNEL 60V , ROHS COMPLIANT: NO | ||
Vishay |
IRLD014PBF | MOSFET N-CH 60V 1.7A 4-DIP |