IRL8113ST

IRL8113STRL vs IRL8113STRR vs IRL8113STRLPBF

 
PartNumberIRL8113STRLIRL8113STRRIRL8113STRLPBF
DescriptionMOSFET N-CH 30V 105A D2PAKMOSFET N-CH 30V 105A D2PAKDarlington Transistors MOSFET MOSFT 30V 105A 6mOhm 23nC Qg log lvl
Manufacturer--International Rectifier
Product Category--Transistors - FETs, MOSFETs - Single
Packaging--Reel
Unit Weight--4 g
Mounting Style--SMD/SMT
Technology--Si
Number of Channels--1 Channel
Configuration--Single
Package Case--TO-252-3
Transistor Type--1 N-Channel
Pd Power Dissipation--110 W
Maximum Operating Temperature--+ 175 C
Fall Time--5 ns
Rise Time--38 ns
Id Continuous Drain Current--105 A
Vds Drain Source Breakdown Voltage--30 V
Vgs th Gate Source Threshold Voltage--2.25 V
Rds On Drain Source Resistance--6 mOhms
Transistor Polarity--N-Channel
Qg Gate Charge--35 nC
Forward Transconductance Min--86 S
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRL8113STRL MOSFET N-CH 30V 105A D2PAK
IRL8113STRR MOSFET N-CH 30V 105A D2PAK
IRL8113STRRPBF MOSFET N-CH 30V 105A D2PAK
IRL8113STRLPBF Darlington Transistors MOSFET MOSFT 30V 105A 6mOhm 23nC Qg log lvl
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