IRL8113P

IRL8113PBF vs IRL8113PBF , 2SK1728 vs IRL8113PBF,IRL8113

 
PartNumberIRL8113PBFIRL8113PBF , 2SK1728IRL8113PBF,IRL8113
DescriptionMOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current105 A--
Rds On Drain Source Resistance7.1 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge23 nC--
Pd Power Dissipation110 W--
ConfigurationSingle--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Part # AliasesSP001576430--
Unit Weight0.211644 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRL8113PBF MOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl
IRL8113PBF IGBT Transistors MOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl
IRL8113PBF , 2SK1728 Nuevo y original
IRL8113PBF,IRL8113 Nuevo y original
IRL8113PBF-H Nuevo y original
IRL8113PBF. N CHANNEL MOSFET, 30V, 105A, TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:105A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.006ohm, Rds(on) Test Voltage Vgs:10V,
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