 |  |  | |
| PartNumber | IRL3716PBF | IRL3716S | IRL3716 |
| Description | MOSFET 20V 1 N-CH HEXFET 4mOhms 53nC | MOSFET N-CH 20V 180A D2PAK | MOSFET N-CH 20V 180A TO-220AB |
| Manufacturer | Infineon | IR | IR/VISHAY |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 180 A | - | - |
| Rds On Drain Source Resistance | 4.8 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 53 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 210 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | Smps MOSFET | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 36 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 140 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 38 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Part # Aliases | SP001558646 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon / IR |
IRL3716SPBF | MOSFET 20V 1 N-CH HEXFET 4mOhms 53nC | |
| IRL3716PBF | MOSFET 20V 1 N-CH HEXFET 4mOhms 53nC | ||
Infineon Technologies |
IRL3716S | MOSFET N-CH 20V 180A D2PAK | |
| IRL3716SPBF | MOSFET N-CH 20V 180A D2PAK | ||
| IRL3716STRLPBF | MOSFET N-CH 20V 180A D2PAK | ||
| IRL3716STRRPBF | MOSFET N-CH 20V 180A D2PAK | ||
| IRL3716 | MOSFET N-CH 20V 180A TO-220AB | ||
| IRL3716PBF | MOSFET N-CH 20V 180A TO-220AB |