IRL3103S

IRL3103SPBF vs IRL3103S vs IRL3103STRL

 
PartNumberIRL3103SPBFIRL3103SIRL3103STRL
DescriptionMOSFET 30V 1 N-CH HEXFET PWR MOSFET 12mOhmsMOSFET N-CH 30V 64A D2PAKMOSFET N-CH 30V 64A D2PAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current64 A--
Rds On Drain Source Resistance16 mOhms--
Vgs Gate Source Voltage16 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation110 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
TypeHEXFET Power MOSFET--
Width6.22 mm--
BrandInfineon / IR--
Fall Time9.1 ns--
Product TypeMOSFET--
Rise Time120 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14 ns--
Typical Turn On Delay Time8.9 ns--
Part # AliasesSP001578512--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRL3103STRLPBF MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC
IRL3103SPBF MOSFET 30V 1 N-CH HEXFET PWR MOSFET 12mOhms
IRL3103STRRPBF MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC
Infineon Technologies
Infineon Technologies
IRL3103STRRPBF MOSFET N-CH 30V 64A D2PAK
IRL3103STRLPBF RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC
IRL3103S MOSFET N-CH 30V 64A D2PAK
IRL3103SPBF MOSFET N-CH 30V 64A D2PAK
IRL3103STRL MOSFET N-CH 30V 64A D2PAK
IRL3103STRR MOSFET N-CH 30V 64A D2PAK
IRL3103S L3103S Nuevo y original
IRL3103SHR Nuevo y original
IRL3103STR Nuevo y original
IRL3103STRPBF Nuevo y original
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