IRGSL1

IRGSL10B60KDPBF vs IRGSL10B60KD vs IRGSL14C40L

 
PartNumberIRGSL10B60KDPBFIRGSL10B60KDIRGSL14C40L
DescriptionIGBT Transistors 600V UltraFast 10-30kHz
ManufacturerInfineonInfineon TechnologiesIR
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-262-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.2 V2.2 V-
Maximum Gate Emitter Voltage20 V+/- 20 V-
Continuous Collector Current at 25 C22 A22 A-
Pd Power Dissipation104 W--
Minimum Operating Temperature- 55 C- 55 C-
PackagingTubeTube-
Height9.65 mm--
Length10.67 mm--
Width4.83 mm--
BrandInfineon / IR--
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Part # AliasesSP001545220--
Unit Weight0.073511 oz0.073511 oz-
Series---
Package Case-TO-262-3 Long Leads, I2Pak, TO-262AA-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-262-
Power Max-156W-
Reverse Recovery Time trr-90ns-
Current Collector Ic Max-22A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type-NPT-
Current Collector Pulsed Icm-44A-
Vce on Max Vge Ic-2.2V @ 15V, 10A-
Switching Energy-140μJ (on), 250μJ (off)-
Gate Charge-38nC-
Td on off 25°C-30ns/230ns-
Test Condition-400V, 10A, 47 Ohm, 15V-
Pd Power Dissipation-104 W-
Collector Emitter Voltage VCEO Max-600 V-
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRGSL10B60KDPBF IGBT Transistors 600V UltraFast 10-30kHz
IRGSL14C40LPBF IGBT Transistors 430V Low-Vceon
Infineon Technologies
Infineon Technologies
IRGSL15B60KDPBF IGBT Transistors IGBT DISCRETES
IRGSL10B60KD Nuevo y original
IRGSL14C40L Nuevo y original
IRGSL15B60KD 31A, 600V, N-CHANNEL IGBT, TO-262
Infineon Technologies
Infineon Technologies
IRGSL15B60KDPBF IGBT 600V 31A 208W TO262
IRGSL10B60KDPBF IGBT Transistors 600V UltraFast 10-30kHz
IRGSL14C40LPBF IGBT Transistors 430V Low-Vceon
Top