PartNumber | IRGS4062DPBF | IRGS4062DTRLPBF | IRGS4064DPBF |
Description | IGBT Transistors 600V Low VCEon | IGBT Transistors IGBT DISCRETES | IGBT Transistors 600V Low VCEon Co-Pack IGBT |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Package / Case | TO-263-3 | - | TO-263-3 |
Mounting Style | SMD/SMT | - | SMD/SMT |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 600 V | - | 600 V |
Collector Emitter Saturation Voltage | 1.95 V | - | 2 V |
Maximum Gate Emitter Voltage | 20 V | - | 20 V |
Continuous Collector Current at 25 C | 48 A | - | 20 A |
Pd Power Dissipation | 250 W | - | 101 W |
Minimum Operating Temperature | - 55 C | - | - |
Packaging | Tube | - | Tube |
Height | 4.57 mm | - | 4.57 mm |
Length | 10.31 mm | - | 10.31 mm |
Width | 9.45 mm | - | 9.45 mm |
Brand | Infineon / IR | Infineon Technologies | Infineon / IR |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 50 | - | 50 |
Subcategory | IGBTs | IGBTs | IGBTs |
Part # Aliases | SP001535940 | SP001541722 | SP001533052 |
Unit Weight | 0.009185 oz | - | 0.009185 oz |
Gate Emitter Leakage Current | - | - | 100 nA |