IRGPS60B120KDP

IRGPS60B120KDP vs IRGPS60B120KDP??? vs IRGPS60B120KDPBF

 
PartNumberIRGPS60B120KDPIRGPS60B120KDP???IRGPS60B120KDPBF
DescriptionIGBT Transistors 1200V UltraFast 5-40kHz
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-274-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2.33 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C105 A--
Pd Power Dissipation595 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Continuous Collector Current Ic Max120 A--
Height20.3 mm--
Length15.6 mm--
Width5 mm--
BrandInfineon / IR--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001540752--
Unit Weight0.223990 oz--
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRGPS60B120KDP IGBT Transistors 1200V UltraFast 5-40kHz
IRGPS60B120KDP??? Nuevo y original
IRGPS60B120KDPBF Nuevo y original
Infineon Technologies
Infineon Technologies
IRGPS60B120KDP IGBT Transistors 1200V UltraFast 5-40kHz
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