PartNumber | IRGI4085-111PBF | IRGI4085 | IRGI4085PBF |
Description | IGBT Transistors | ||
Manufacturer | Infineon | IR | IR |
Product Category | IGBT Transistors | IGBTs - Single | IC Chips |
Technology | Si | - | - |
Package / Case | TO-220-3 | - | - |
Mounting Style | Through Hole | - | - |
Collector Emitter Voltage VCEO Max | 330 V | - | - |
Collector Emitter Saturation Voltage | 1.5 V | - | - |
Maximum Gate Emitter Voltage | 30 V | - | - |
Continuous Collector Current at 25 C | 28 A | - | - |
Pd Power Dissipation | 38 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Brand | Infineon / IR | - | - |
Gate Emitter Leakage Current | +/- 100 nA | - | - |
Product Type | IGBT Transistors | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.211644 oz | - | - |