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| PartNumber | IRG8P45N65UD1-EPBF | IRG8P40N120KDPBF | IRG8P40N120KD-EPBF |
| Description | MOSFET IGBT DISCRETES | IGBT Transistors 1200V IGBT GEN8 | IGBT Transistors 1200V IGBT GEN8 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | IGBT Transistors | IGBTs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Tradename | StrongIRFET | - | - |
| Packaging | Tube | Tube | Tube |
| Brand | Infineon / IR | Infineon / IR | - |
| Product Type | MOSFET | IGBT Transistors | - |
| Factory Pack Quantity | 25 | 25 | - |
| Subcategory | MOSFETs | IGBTs | - |
| Part # Aliases | SP001532704 | SP001537700 | - |
| Package / Case | - | TO-247AC-3 | - |
| Mounting Style | - | Through Hole | Through Hole |
| Configuration | - | Single | Single |
| Collector Emitter Voltage VCEO Max | - | 1200 V | - |
| Collector Emitter Saturation Voltage | - | 1.7 V | 1.7 V |
| Maximum Gate Emitter Voltage | - | 30 V | 30 V |
| Continuous Collector Current at 25 C | - | 60 A | 60 A |
| Pd Power Dissipation | - | 305 W | - |
| Minimum Operating Temperature | - | - 40 C | - 40 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Continuous Collector Current Ic Max | - | 40 A | 40 A |
| Gate Emitter Leakage Current | - | 200 nA | 200 nA |
| Series | - | - | - |
| Unit Weight | - | - | 0.229281 oz |
| Package Case | - | - | TO-247-3 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247AD |
| Power Max | - | - | 305W |
| Reverse Recovery Time trr | - | - | 80ns |
| Current Collector Ic Max | - | - | 60A |
| Voltage Collector Emitter Breakdown Max | - | - | 1200V |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | - | 75A |
| Vce on Max Vge Ic | - | - | 2V @ 15V, 25A |
| Switching Energy | - | - | 1.6mJ (on), 1.8mJ (off) |
| Gate Charge | - | - | 240nC |
| Td on off 25°C | - | - | 40ns/245ns |
| Test Condition | - | - | 600V, 25A, 10 Ohm, 15V |
| Pd Power Dissipation | - | - | 305 W |
| Collector Emitter Voltage VCEO Max | - | - | 1200 V |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon / IR |
IRG8P45N65UD1-EPBF | MOSFET IGBT DISCRETES | |
| IRG8P45N65UD1PBF | MOSFET IGBT DISCRETES | ||
| IRG8P40N120KDPBF | IGBT Transistors 1200V IGBT GEN8 | ||
Infineon Technologies |
IRG8P45N65UD1-EPBF | G8 650V 45A CO-PAK-247 | |
| IRG8P45N65UD1PBF | G8 650V 45A CO-PAK-247 | ||
| IRG8P40N120KD-EPBF | IGBT Transistors 1200V IGBT GEN8 | ||
| IRG8P40N120KDPBF | IGBT Transistors 1200V IGBT GEN8 | ||
| IRG8P40N120KDEPB | IGBT 1200V 60A 305W TO-247AD | ||
| IRG8P40N120KD | Nuevo y original | ||
| IRG8P40N120KDE | Nuevo y original |