IRG7PH30

IRG7PH30K10PBF vs IRG7PH30K10DPBF

 
PartNumberIRG7PH30K10PBFIRG7PH30K10DPBF
DescriptionIGBT Transistors Trnch IGBT 1200V 10A single IGBTIGBT Transistors 1200V 30A
ManufacturerInfineonInfineon
Product CategoryIGBT TransistorsIGBT Transistors
RoHSYY
TechnologySiSi
Package / CaseTO-247-3TO-247-3
Mounting StyleThrough HoleThrough Hole
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max1.2 kV1.2 kV
Collector Emitter Saturation Voltage2.05 V2.35 V
Maximum Gate Emitter Voltage30 V30 V
Continuous Collector Current at 25 C33 A30 A
Pd Power Dissipation210 W180 W
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C-
PackagingTubeTube
Continuous Collector Current Ic Max33 A-
Height20.7 mm20.7 mm
Length15.87 mm15.87 mm
Width5.31 mm5.31 mm
BrandInfineon / IRInfineon / IR
Gate Emitter Leakage Current100 nA-
Product TypeIGBT TransistorsIGBT Transistors
Factory Pack Quantity2525
SubcategoryIGBTsIGBTs
Part # AliasesSP001537520SP001549446
Unit Weight1.340411 oz1.340411 oz
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRG7PH30K10PBF IGBT Transistors Trnch IGBT 1200V 10A single IGBT
IRG7PH30K10DPBF IGBT Transistors 1200V 30A
Infineon Technologies
Infineon Technologies
IRG7PH30K10DPBF IGBT Transistors 1200V 30A
IRG7PH30K10PBF IGBT 1200V 33A 210W TO247AC
IRG7PH30K10 Nuevo y original
IRG7PH30K10D Nuevo y original
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