IRG4RC10ST

IRG4RC10STRRPBF vs IRG4RC10STR vs IRG4RC10STRL

 
PartNumberIRG4RC10STRRPBFIRG4RC10STRIRG4RC10STRL
DescriptionIGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBTIGBT 600V 14A 38W DPAKIGBT 600V 14A 38W DPAK
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C14 A--
Pd Power Dissipation38 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReelTape & Reel (TR)Tape & Reel (TR)
Continuous Collector Current Ic Max14 A--
Height2.39 mm--
Length6.73 mm--
Width6.22 mm--
BrandInfineon / IR--
Product TypeIGBT Transistors--
Factory Pack Quantity6000--
SubcategoryIGBTs--
Part # AliasesSP001532574--
Unit Weight0.012346 oz--
Series---
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type-StandardStandard
Mounting Type-Surface MountSurface Mount
Supplier Device Package-D-PakD-Pak
Power Max-38W38W
Reverse Recovery Time trr---
Current Collector Ic Max-14A14A
Voltage Collector Emitter Breakdown Max-600V600V
IGBT Type---
Current Collector Pulsed Icm-18A18A
Vce on Max Vge Ic-1.8V @ 15V, 8A1.8V @ 15V, 8A
Switching Energy-140μJ (on), 2.58mJ (off)140μJ (on), 2.58mJ (off)
Gate Charge-15nC15nC
Td on off 25°C-25ns/630ns25ns/630ns
Test Condition-480V, 8A, 100 Ohm, 15V480V, 8A, 100 Ohm, 15V
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRG4RC10STRRPBF IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT
Infineon Technologies
Infineon Technologies
IRG4RC10STR IGBT 600V 14A 38W DPAK
IRG4RC10STRL IGBT 600V 14A 38W DPAK
IRG4RC10STRRPBF IGBT 600V 14A 38W DPAK
IRG4RC10STRPBF Nuevo y original
IRG4RC10STRPBF. Nuevo y original
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