IRG4PSH71U

IRG4PSH71UDPBF vs IRG4PSH71U vs IRG4PSH71UD

 
PartNumberIRG4PSH71UDPBFIRG4PSH71UIRG4PSH71UD
DescriptionIGBT Transistors 1200V UltraFast 4-20kHzIGBT 1200V 99A 350W SUPER247IGBT 1200V 99A 350W SUPER247
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryIGBT TransistorsIC ChipsIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-274-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2.52 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C99 A--
Pd Power Dissipation350 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeBulkBulk
Continuous Collector Current Ic Max99 A--
Height20.3 mm--
Length15.6 mm--
Width5 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001547822--
Unit Weight0.283532 oz--
Series---
Package Case-TO-274AATO-274AA
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-SUPER-247 (TO-274AA)SUPER-247 (TO-274AA)
Power Max-350W350W
Reverse Recovery Time trr--110ns
Current Collector Ic Max-99A99A
Voltage Collector Emitter Breakdown Max-1200V1200V
IGBT Type---
Current Collector Pulsed Icm-200A200A
Vce on Max Vge Ic-2.7V @ 15V, 70A2.7V @ 15V, 70A
Switching Energy-4.77mJ (on), 9.54mJ (off)8.8mJ (on), 9.4mJ (off)
Gate Charge-370nC380nC
Td on off 25°C-51ns/280ns46ns/250ns
Test Condition-960V, 70A, 5 Ohm, 15V960V, 70A, 5 Ohm, 15V
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRG4PSH71UDPBF IGBT Transistors 1200V UltraFast 4-20kHz
IRG4PSH71UPBF IGBT Transistors 1200V UltraFast 8-40kHz
IRG4PSH71UDPBF IGBT Transistors 1200V UltraFast 4-20kHz
IRG4PSH71U IGBT 1200V 99A 350W SUPER247
IRG4PSH71UD IGBT 1200V 99A 350W SUPER247
IRG4PSH71UPBF,G4PSH71U,I Nuevo y original
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