IRG4BC30KD-S

IRG4BC30KD-SPBF vs IRG4BC30KD-STR vs IRG4BC30KD-STRR

 
PartNumberIRG4BC30KD-SPBFIRG4BC30KD-STRIRG4BC30KD-STRR
DescriptionIGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBTIGBT 600V 28A 100W D2PAK
ManufacturerInfineonIRInfineon Technologies
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C28 A--
Pd Power Dissipation100 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube-Tape & Reel (TR)
Continuous Collector Current Ic Max28 A--
Height4.83 mm--
Length10.67 mm--
Width9.65 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Part # AliasesSP001547676--
Unit Weight0.009185 oz--
Series---
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--100W
Reverse Recovery Time trr--42ns
Current Collector Ic Max--28A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--58A
Vce on Max Vge Ic--2.7V @ 15V, 16A
Switching Energy--600μJ (on), 580μJ (off)
Gate Charge--67nC
Td on off 25°C--60ns/160ns
Test Condition--480V, 16A, 23 Ohm, 15V
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRG4BC30KD-SPBF IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT
IRG4BC30KD-SPBF IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT
IRG4BC30KD-STRR IGBT 600V 28A 100W D2PAK
IRG4BC30KD-STR Nuevo y original
IRG4BC30KD-STRRPBF Nuevo y original
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