 | | | |
| PartNumber | IRFZ44ESTRL | IRFZ44ESPBF | IRFZ44ES |
| Description | MOSFET N-CH 60V 48A D2PAK | Darlington Transistors MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC | MOSFET N-CH 60V 48A D2PAK |
| Manufacturer | - | IR | IR/VISHAY |
| Product Category | - | FETs - Single | FETs - Single |
| Packaging | - | Tube | - |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | TO-252-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 110 W | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 70 ns | - |
| Rise Time | - | 60 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 48 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Rds On Drain Source Resistance | - | 23 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 70 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |
| Qg Gate Charge | - | 40 nC | - |
| Channel Mode | - | Enhancement | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFZ44ESTRLPBF | MOSFET MOSFT 60V 48A 23mOhm 40nC | |
| IRFZ44ESTRLPBF | MOSFET N-CH 60V 48A D2PAK | ||
| IRFZ44ESTRRPBF | MOSFET N-CH 60V 48A D2PAK | ||
| IRFZ44ESTRL | MOSFET N-CH 60V 48A D2PAK | ||
| IRFZ44ESTRR | MOSFET N-CH 60V 48A D2PAK | ||
| IRFZ44ESPBF | Darlington Transistors MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC | ||
| IRFZ44ES | MOSFET N-CH 60V 48A D2PAK | ||
Infineon / IR |
IRFZ44ESTRRPBF | MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC | |
| IRFZ44ESTRLPBF-CUT TAPE | Nuevo y original | ||
| IRFZ44ESTRPBF | Nuevo y original |