IRFZ34NST

IRFZ34NSTRLPBF vs IRFZ34NSTRR vs IRFZ34NSTRRPBF

 
PartNumberIRFZ34NSTRLPBFIRFZ34NSTRRIRFZ34NSTRRPBF
DescriptionMOSFET MOSFT 55V 29A 40mOhm 22.7nCMOSFET N-CH 55V 29A D2PAKDarlington Transistors MOSFET 60V 1 N-CH HEXFET 40mOhms 22.7nC
ManufacturerInfineonIRIR
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current29 A--
Rds On Drain Source Resistance40 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22.7 nC--
Pd Power Dissipation68 W--
ConfigurationSingleSingleSingle
PackagingReelReelReel
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Part # AliasesSP001568092--
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case-TO-252-3TO-252-3
Pd Power Dissipation-68 W68 W
Maximum Operating Temperature-+ 175 C+ 175 C
Minimum Operating Temperature-- 55 C- 55 C
Fall Time-40 ns40 ns
Rise Time-49 ns49 ns
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-29 A29 A
Vds Drain Source Breakdown Voltage-55 V55 V
Vgs th Gate Source Threshold Voltage-4 V4 V
Rds On Drain Source Resistance-40 mOhms40 mOhms
Typical Turn Off Delay Time-31 ns31 ns
Typical Turn On Delay Time-7 ns7 ns
Qg Gate Charge-34 nC34 nC
Forward Transconductance Min-6.5 S6.5 S
Channel Mode-EnhancementEnhancement
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRFZ34NSTRLPBF MOSFET MOSFT 55V 29A 40mOhm 22.7nC
IRFZ34NSTRR MOSFET N-CH 55V 29A D2PAK
IRFZ34NSTRLPBF MOSFET N-CH 55V 29A D2PAK
IRFZ34NSTRRPBF Darlington Transistors MOSFET 60V 1 N-CH HEXFET 40mOhms 22.7nC
IRFZ34NSTRLPBF-CUT TAPE Nuevo y original
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