IRFS59

IRFS59N10DTRLP vs IRFS59N10DTRRP vs IRFS59N10DPBF

 
PartNumberIRFS59N10DTRLPIRFS59N10DTRRPIRFS59N10DPBF
DescriptionMOSFET MOSFT 100V 59A 25mOhm 76nCMOSFET N-CH 100V 59A D2PAKMOSFET N-CH 100V 59A D2PAK
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current59 A--
Rds On Drain Source Resistance25 mOhms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge76 nC--
Minimum Operating Temperature- 55 C-- 55 C
Pd Power Dissipation200 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReel-Tube
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Fall Time12 ns-12 ns
Product TypeMOSFET--
Rise Time90 ns-90 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns-20 ns
Typical Turn On Delay Time16 ns-16 ns
Part # AliasesSP001557452--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--200 W
Maximum Operating Temperature--+ 175 C
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--59 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--25 mOhms
Qg Gate Charge--76 nC
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRFS59N10DTRLP MOSFET MOSFT 100V 59A 25mOhm 76nC
IRFS59N10DTRRP MOSFET N-CH 100V 59A D2PAK
IRFS59N10DTRLP RF Bipolar Transistors MOSFET MOSFT 100V 59A 25mOhm 76nC
IRFS59N10DPBF MOSFET N-CH 100V 59A D2PAK
IRFS59N10DTRLP-CUT TAPE Nuevo y original
IRFS59N10DTRRPBF Nuevo y original
IRFS59N10DTRLPBF Nuevo y original
Top