IRFR3708

IRFR3708TR vs IRFR3708PBF vs IRFR3708

 
PartNumberIRFR3708TRIRFR3708PBFIRFR3708
DescriptionMOSFET N-CH 30V 61A DPAKDarlington Transistors MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nCMOSFET N-CH 30V 61A DPAK
Manufacturer-IRIR
Product Category-FETs - SingleFETs - Single
Packaging-Tube-
Unit Weight-0.139332 oz-
Mounting Style-SMD/SMT-
Package Case-TO-252-3-
Technology-Si-
Number of Channels-1 Channel-
Configuration-Single-
Transistor Type-1 N-Channel-
Pd Power Dissipation-87 W-
Maximum Operating Temperature-+ 175 C-
Minimum Operating Temperature-- 55 C-
Fall Time-3.7 ns-
Rise Time-50 ns-
Vgs Gate Source Voltage-12 V-
Id Continuous Drain Current-61 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-0.6 V to 2 V-
Rds On Drain Source Resistance-14 mOhms-
Transistor Polarity-N-Channel-
Typical Turn Off Delay Time-17.6 ns-
Typical Turn On Delay Time-7.2 ns-
Qg Gate Charge-24 nC-
Forward Transconductance Min-49 S-
Channel Mode-Enhancement-
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRFR3708TRLPBF MOSFET MOSFT 30V 61A 12.5mOhm 24nC
IRFR3708TRPBF MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC
IRFR3708TRRPBF MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC
Infineon Technologies
Infineon Technologies
IRFR3708TRLPBF MOSFET N-CH 30V 61A DPAK
IRFR3708TR MOSFET N-CH 30V 61A DPAK
IRFR3708TRL MOSFET N-CH 30V 61A DPAK
IRFR3708TRR MOSFET N-CH 30V 61A DPAK
IRFR3708PBF Darlington Transistors MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC
IRFR3708 MOSFET N-CH 30V 61A DPAK
IRFR3708TRPBF MOSFET N-CH 30V 61A DPAK
IRFR3708TRRPBF RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC
IRFR3708TRPBF. Nuevo y original
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