IRFR330

IRFR3303CPBF vs IRFR3303PBF vs IRFR3303TR

 
PartNumberIRFR3303CPBFIRFR3303PBFIRFR3303TR
DescriptionMOSFET N-CH 30V 33A DPAKMOSFET N-CH 30V 33A DPAKMOSFET N-CH 30V 33A DPAK
Manufacturer-IRIR
Product Category-FETs - SingleFETs - Single
Packaging-Tube-
Unit Weight-0.139332 oz-
Mounting Style-SMD/SMT-
Package Case-TO-252-3-
Technology-Si-
Number of Channels-1 Channel-
Configuration-Single-
Transistor Type-1 N-Channel-
Pd Power Dissipation-57 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Fall Time-28 ns-
Rise Time-99 ns-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-33 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-2 V to 4 V-
Rds On Drain Source Resistance-31 mOhms-
Transistor Polarity-N-Channel-
Typical Turn Off Delay Time-16 ns-
Typical Turn On Delay Time-11 ns-
Qg Gate Charge-19.3 nC-
Forward Transconductance Min-9.3 S-
Channel Mode-Enhancement-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRFR3303TRPBF MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC
IRFR3303CPBF MOSFET N-CH 30V 33A DPAK
IRFR3303PBF MOSFET N-CH 30V 33A DPAK
IRFR3303TR MOSFET N-CH 30V 33A DPAK
IRFR3303TRL MOSFET N-CH 30V 33A DPAK
IRFR3303TRLPBF MOSFET N-CH 30V 33A DPAK
IRFR3303TRPBF MOSFET N-CH 30V 33A DPAK
IRFR3303TRR MOSFET N-CH 30V 33A DPAK
Infineon / IR
Infineon / IR
IRFR3303TRLPBF MOSFET MOSFT 30V 33A 31mOhm 19.3nC
IRFR3303 MOSFET Transistor, N-Channel, TO-252AA
IRFR3303/FR3303 Nuevo y original
IRFR3303TR,FR3303 Nuevo y original
IRFR330BTM Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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