 |  | | |
| PartNumber | IRFR220TRLPBF | IRFR220TRLPBF-CUT TAPE | IRFR220TRL |
| Description | MOSFET N-CH 200V HEXFET MOSFET D-PAK | MOSFET N-Chan 200V 4.8 Amp | |
| Manufacturer | Vishay | - | VISHAY |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Packaging | Reel | - | Reel |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | IRFR | - | - |
| Width | 6.22 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.050717 oz | - | 0.050717 oz |
| Package Case | - | - | TO-252-3 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 2.5 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 13 ns |
| Rise Time | - | - | 22 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 4.8 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Rds On Drain Source Resistance | - | - | 800 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 19 ns |
| Typical Turn On Delay Time | - | - | 7.2 ns |
| Channel Mode | - | - | Enhancement |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFR220TRLPBF | MOSFET N-CH 200V HEXFET MOSFET D-PAK | |
| IRFR220TRLPBF-CUT TAPE | Nuevo y original | ||
| IRFR220TRL | MOSFET N-Chan 200V 4.8 Amp | ||
Vishay |
IRFR220TRLPBF | MOSFET N-CH 200V 4.8A DPAK |