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IRFNL210BT

IRFNL210BTA-FP001 vs IRFNL210BTA vs IRFNL210BTA_FP001

 
PartNumberIRFNL210BTA-FP001IRFNL210BTAIRFNL210BTA_FP001
DescriptionMOSFET 200V N-CHANMOSFET 200V N-CHANTrans MOSFET N-CH 200V 1A 3-Pin TO-92L T/R - Ammo Pack (Alt: IRFNL210BTA-FP001)
ManufacturerON SemiconductorFAIRCHILDFairchild Semiconductor
Product CategoryMOSFETFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-92-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current1 A--
Rds On Drain Source Resistance1.5 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation3.1 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingAmmo Pack-Ammo Pack
Height5.33 mm--
Length5.2 mm--
Transistor Type1 N-Channel-1 N-Channel
Width4.19 mm--
BrandON Semiconductor / Fairchild--
Fall Time25 ns-25 ns
Product TypeMOSFET--
Rise Time35 ns-35 ns
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns-20 ns
Typical Turn On Delay Time5.2 ns-5.2 ns
Part # AliasesIRFNL210BTA_FP001--
Unit Weight0.006314 oz-0.006314 oz
Package Case--TO-92-3
Pd Power Dissipation--3.1 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--1 A
Vds Drain Source Breakdown Voltage--200 V
Rds On Drain Source Resistance--1.5 Ohms
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild 		IRFNL210BTA-FP001 MOSFET 200V N-CHAN
IRFNL210BTA MOSFET 200V N-CHAN
IRFNL210BTA_FP001 Trans MOSFET N-CH 200V 1A 3-Pin TO-92L T/R - Ammo Pack (Alt: IRFNL210BTA-FP001)
IRFNL210BTRA Nuevo y original
ON Semiconductor
ON Semiconductor 		IRFNL210BTA-FP001 MOSFET N-CH 200V 1A TO-92L
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