PartNumber | IRFHM830TRPBF | IRFHM830TR2PBF |
Description | MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms | MOSFET MOSFT 30V 40A 3.8mOhm |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PQFN-8 | PQFN-8 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V |
Id Continuous Drain Current | 21 A | 21 A |
Rds On Drain Source Resistance | 4.8 mOhms | 4.8 mOhms |
Vgs th Gate Source Threshold Voltage | 1.8 V | 1.8 V |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 31 nC | 31 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 2.7 W | 2.7 W |
Configuration | Single | Single |
Channel Mode | Enhancement | - |
Packaging | Reel | Reel |
Height | 1.05 mm | 1.05 mm |
Length | 3.3 mm | 3.3 mm |
Transistor Type | 1 N-Channel | 1 N-Channel |
Type | HEXFET Power MOSFET | - |
Width | 3.3 mm | 3.3 mm |
Brand | Infineon Technologies | Infineon / IR |
Forward Transconductance Min | 52 S | 52 S |
Fall Time | 9.2 ns | 9.2 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 25 ns | 25 ns |
Factory Pack Quantity | 4000 | 400 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 13 ns | 13 ns |
Typical Turn On Delay Time | 12 ns | 12 ns |
Part # Aliases | SP001566782 | SP001560438 |
Unit Weight | 0.002328 oz | 0.070548 oz |