PartNumber | IRFH8330TRPBF | IRFH8334TR2PBF | IRFH8330TR2PBF |
Description | MOSFET 30V 1 N-CH HEXFET 6.6mOhms 9.3nC | MOSFET 30V 999A SO-8 | IGBT Transistors MOSFET MOSFT 30V 25A 6.6mOhm 9.6nC Qg |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PQFN-8 | PQFN-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 56 A | 14 A | - |
Rds On Drain Source Resistance | 9.9 mOhms | 9 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.35 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 9.3 nC | 7.1 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 35 W | 3.2 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 0.83 mm | 0.83 mm | - |
Length | 6 mm | 6 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | HEXFET Power MOSFET | - | - |
Width | 5 mm | 5 mm | - |
Brand | Infineon Technologies | Infineon / IR | - |
Forward Transconductance Min | 61 S | 44 S | - |
Fall Time | 5.7 ns | 4.6 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 15 ns | 14 ns | - |
Factory Pack Quantity | 4000 | 400 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 10 ns | 7 ns | - |
Typical Turn On Delay Time | 9.2 ns | 8.3 ns | - |
Part # Aliases | SP001566818 | SP001564126 | - |
Unit Weight | - | 0.017637 oz | - |