| PartNumber | IRFH5010TRPBF | IRFH5010TR2PBF | IRFH5015TR2PBF |
| Description | MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC | MOSFET MOSFT 100V 100A 9.0mOhm 65nC Qg | MOSFET MOSFT 150V 56A 31mOhm 33nC Qg |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PQFN-8 | PQFN-8 | PQFN-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 150 V |
| Id Continuous Drain Current | 100 A | 13 A | 10 A |
| Rds On Drain Source Resistance | 9 mOhms | 9 mOhms | 31 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 65 nC | 65 nC | 33 nC |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 250 W | 3.6 W | 3.6 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 0.83 mm | 0.83 mm | 0.83 mm |
| Length | 6 mm | 6 mm | 6 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | HEXFET Power MOSFET | - | - |
| Width | 5 mm | 5 mm | 5 mm |
| Brand | Infineon / IR | Infineon / IR | Infineon / IR |
| Forward Transconductance Min | 206 S | 206 S | 38 S |
| Fall Time | 8.6 ns | 8.6 ns | 3.4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 12 ns | 9.7 ns |
| Factory Pack Quantity | 4000 | 400 | 400 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 27 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | SP001560282 | SP001570754 | SP001570714 |
| Unit Weight | - | - | 0.070548 oz |