| PartNumber | IRFD120PBF | IRFD123PBF | IRFD120 |
| Description | MOSFET N-CH 100V HEXFET MOSFET HEXDI | MOSFET N-CH 100V HEXFET MOSFET HEXDI | MOSFET RECOMMENDED ALT 844-IRFD120PBF |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | N |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | HVMDIP-4 | HVMDIP-4 | HVMDIP-4 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1.3 A | - | - |
| Rds On Drain Source Resistance | 270 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 16 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 3.37 mm | - | 3.37 mm |
| Length | 6.29 mm | - | 6.29 mm |
| Series | IRFD | IRFD | IRFD |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | 5 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 0.8 S | - | - |
| Fall Time | 17 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 27 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 6.8 ns | - | - |