PartNumber | IRFBE30PBF | IRFBE30PBF,FBE30,IRFBE30 | IRFBE30PBF-CN |
Description | MOSFET N-CH 800V HEXFET MOSFET | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220AB-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 800 V | - | - |
Id Continuous Drain Current | 4.1 A | - | - |
Rds On Drain Source Resistance | 3 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 78 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 125 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Height | 15.49 mm | - | - |
Length | 10.41 mm | - | - |
Series | IRFBE | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 4.7 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 2.5 S | - | - |
Fall Time | 30 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 33 ns | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 82 ns | - | - |
Typical Turn On Delay Time | 12 ns | - | - |
Unit Weight | 0.211644 oz | - | - |