IRFB773

IRFB7730PBF vs IRFB7734PBF

 
PartNumberIRFB7730PBFIRFB7734PBF
DescriptionMOSFET 75V Single N-Channel HEXFET PowerMOSFET 75V Single N-Channel HEXFET Power
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage75 V75 V
Id Continuous Drain Current195 A183 A
Rds On Drain Source Resistance2.6 mOhms3.5 mOhms
Vgs th Gate Source Threshold Voltage3.7 V3.7 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge271 nC180 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation375 W290 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameStrongIRFETStrongIRFET
PackagingTubeTube
Height15.65 mm15.65 mm
Length10 mm10 mm
Transistor Type1 N-Channel1 N-Channel
Width4.4 mm4.4 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min249 S250 S
Fall Time115 ns100 ns
Product TypeMOSFETMOSFET
Rise Time120 ns123 ns
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time180 ns124 ns
Typical Turn On Delay Time21 ns20 ns
Part # AliasesSP001556128SP001565862
Unit Weight0.211644 oz0.211644 oz
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRFB7730PBF MOSFET 75V Single N-Channel HEXFET Power
IRFB7734PBF MOSFET 75V Single N-Channel HEXFET Power
IRFB7734PBF Darlington Transistors MOSFET 75V Single N-Channel HEXFET Powe
IRFB7730PBF IGBT Transistors MOSFET 75V Single N-Channel HEXFET Powe
IRFB7730GPBF Nuevo y original
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