 | | |
| PartNumber | IRFB7434PBF | IRFB7434GPBF |
| Description | MOSFET 40V 1.6mOhm 195A HEXFET 294W 216nC | MOSFET MOSFET, 40V, 195A, 1 216 nC Qg, TO-220AB |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V |
| Id Continuous Drain Current | 317 A | 317 A |
| Rds On Drain Source Resistance | 1.6 mOhms | 1.25 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 324 nC | 324 nC |
| Pd Power Dissipation | 294 W | 294 W |
| Tradename | StrongIRFET | StrongIRFET |
| Packaging | Tube | Tube |
| Height | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm |
| Width | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001575514 | SP001577770 |
| Unit Weight | 0.211644 oz | 0.063493 oz |
| Number of Channels | - | 1 Channel |
| Vgs th Gate Source Threshold Voltage | - | 2.2 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 N-Channel |
| Forward Transconductance Min | - | 211 S |
| Fall Time | - | 68 ns |
| Rise Time | - | 68 ns |
| Typical Turn Off Delay Time | - | 115 ns |
| Typical Turn On Delay Time | - | 24 ns |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFB7434PBF | MOSFET 40V 1.6mOhm 195A HEXFET 294W 216nC | |
| IRFB7434GPBF | MOSFET N CH 40V 195A TO220AB | ||
| IRFB7434PBF | MOSFET N CH 40V 195A TO220 | ||
Infineon / IR |
IRFB7434GPBF | MOSFET MOSFET, 40V, 195A, 1 216 nC Qg, TO-220AB | |
| IRFB7434 | Nuevo y original |