IRFB413

IRFB4137PBF vs IRFB4137PBF , 2SK1092 vs IRFB4137PBF,IRFB4137,FB4

 
PartNumberIRFB4137PBFIRFB4137PBF , 2SK1092IRFB4137PBF,IRFB4137,FB4
DescriptionMOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage300 V--
Id Continuous Drain Current38 A--
Rds On Drain Source Resistance56 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge125 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation341 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min45 S--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time23 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time34 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesSP001554580--
Unit Weight0.211644 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRFB4137PBF MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB
IRFB4137PBF Darlington Transistors MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB
IRFB4137PBF , 2SK1092 Nuevo y original
IRFB4137PBF,IRFB4137,FB4 Nuevo y original
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