IRFB3607P

IRFB3607PBF vs IRFB3607PBF,FB3607,IRFB3 vs IRFB3607PBF,IRFB3507PBF,

 
PartNumberIRFB3607PBFIRFB3607PBF,FB3607,IRFB3IRFB3607PBF,IRFB3507PBF,
DescriptionMOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage75 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance7.34 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge56 nC--
Pd Power Dissipation140 W--
ConfigurationSingle--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon / IR--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Part # AliasesSP001551746--
Unit Weight0.211644 oz--
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRFB3607PBF MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg
Infineon Technologies
Infineon Technologies
IRFB3607PBF MOSFET N-CH 75V 80A TO-220AB
IRFB3607PBF,FB3607,IRFB3 Nuevo y original
IRFB3607PBF,IRFB3507PBF, Nuevo y original
IRFB3607PBF,IRFB3607 Nuevo y original
IRFB3607PBF,IRFB4321PBF, Nuevo y original
IRFB3607PBF,IRFB4321PBF,IRFB4321GPBF, Nuevo y original
IRFB3607PBF,IRFB4332PBF Nuevo y original
IRFB3607PBF-H Nuevo y original
IRFB3607PBF. Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:75V, On Resistance Rds(on):0.00734ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Diss
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