 |  |  | |
| PartNumber | IRF9530NSTRLPBF | IRF9530NSTRRPBF | IRF9530NSTRR |
| Description | MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC | MOSFET 1 P-CH -100V HEXFET 200mOhms 38.7nC | MOSFET P-CH 100V 14A D2PAK |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263AB-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 14 A | 14 A | - |
| Rds On Drain Source Resistance | 200 mOhms | 200 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 38.7 nC | 58 nC | - |
| Pd Power Dissipation | 3.8 W | 3.8 W | - |
| Configuration | Single | Single | Single |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001563796 | SP001572446 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Channel Mode | - | Enhancement | Enhancement |
| Type | - | HEXFET Power MOSFET | - |
| Forward Transconductance Min | - | 3.2 S | - |
| Fall Time | - | 46 ns | 46 ns |
| Rise Time | - | 58 ns | 58 ns |
| Typical Turn Off Delay Time | - | 45 ns | 45 ns |
| Typical Turn On Delay Time | - | 15 ns | 15 ns |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 3.8 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | - 14 A |
| Vds Drain Source Breakdown Voltage | - | - | - 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 4 V |
| Rds On Drain Source Resistance | - | - | 200 mOhms |
| Qg Gate Charge | - | - | 58 nC |
| Forward Transconductance Min | - | - | 3.2 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF9530NSTRLPBF | MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC | |
| IRF9530NSTRR | MOSFET P-CH 100V 14A D2PAK | ||
| IRF9530NSTRRPBF | MOSFET P-CH 100V 14A D2PAK | ||
| IRF9530NSTRLPBF | Darlington Transistors MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC | ||
Infineon / IR |
IRF9530NSTRRPBF | MOSFET 1 P-CH -100V HEXFET 200mOhms 38.7nC | |
| IRF9530NSTRLPBF-CUT TAPE | Nuevo y original | ||
| IRF9530NSTRL | Nuevo y original | ||
| IRF9530NSTRLPBF,IRF9530N | Nuevo y original | ||
| IRF9530NSTRPBF | Nuevo y original |