IRF7853T

IRF7853TRPBF vs IRF7853TRPBF-CUT TAPE vs IRF7853TRPBF.

 
PartNumberIRF7853TRPBFIRF7853TRPBF-CUT TAPEIRF7853TRPBF.
DescriptionMOSFET MOSFT 100V 8.3A 18mOhm 28nC QgTransistor Polarity:N Channel, Continuous Drain Current Id:8.3A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0144ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4.9V, Power D
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current8.3 A--
Rds On Drain Source Resistance18 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge28 nC--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel--
Width3.9 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Part # AliasesSP001554438--
Unit Weight0.019048 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRF7853TRPBF MOSFET MOSFT 100V 8.3A 18mOhm 28nC Qg
IRF7853TRPBF MOSFET N-CH 100V 8.3A 8-SOIC
IRF7853TRPBF-CUT TAPE Nuevo y original
IRF7853TRPBF. Transistor Polarity:N Channel, Continuous Drain Current Id:8.3A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0144ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4.9V, Power D
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