PartNumber | IRF7665S2TRPBF | IRF7665S2TRPBF. | IRF7665S2TR1PBF |
Description | MOSFET 100V DIGITAL AUDIO 1 N-CH HEXFET | IGBT Transistors MOSFET MOSFT 100V 14.7A 60mOhm 8.3nC Qg | |
Manufacturer | Infineon | - | IR |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | DirectFET-SB | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 14.4 A | - | - |
Rds On Drain Source Resistance | 51 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 8.3 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Pd Power Dissipation | 30 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | - |
Tradename | DirectFET | - | - |
Packaging | Reel | - | Reel |
Height | 0.7 mm | - | - |
Length | 4.85 mm | - | - |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 3.95 mm | - | - |
Brand | Infineon / IR | - | - |
Fall Time | 3.6 ns | - | 3.6 ns |
Product Type | MOSFET | - | - |
Rise Time | 6.4 ns | - | 6.4 ns |
Factory Pack Quantity | 4800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 7.1 ns | - | - |
Typical Turn On Delay Time | 3.8 ns | - | - |
Part # Aliases | SP001570544 | - | - |
Unit Weight | 0.017637 oz | - | - |
Package Case | - | - | DirectFET-6 |
Pd Power Dissipation | - | - | 15 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 14.4 A |
Vds Drain Source Breakdown Voltage | - | - | 100 V |
Vgs th Gate Source Threshold Voltage | - | - | 5 V |
Rds On Drain Source Resistance | - | - | 51 mOhms |
Qg Gate Charge | - | - | 8.3 nC |
Forward Transconductance Min | - | - | 8.8 S |