IRF7665

IRF7665S2TRPBF vs IRF7665S2TRPBF. vs IRF7665S2TR1PBF

 
PartNumberIRF7665S2TRPBFIRF7665S2TRPBF.IRF7665S2TR1PBF
DescriptionMOSFET 100V DIGITAL AUDIO 1 N-CH HEXFETIGBT Transistors MOSFET MOSFT 100V 14.7A 60mOhm 8.3nC Qg
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseDirectFET-SB--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current14.4 A--
Rds On Drain Source Resistance51 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge8.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation30 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
TradenameDirectFET--
PackagingReel-Reel
Height0.7 mm--
Length4.85 mm--
Transistor Type1 N-Channel-1 N-Channel
Width3.95 mm--
BrandInfineon / IR--
Fall Time3.6 ns-3.6 ns
Product TypeMOSFET--
Rise Time6.4 ns-6.4 ns
Factory Pack Quantity4800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time7.1 ns--
Typical Turn On Delay Time3.8 ns--
Part # AliasesSP001570544--
Unit Weight0.017637 oz--
Package Case--DirectFET-6
Pd Power Dissipation--15 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--14.4 A
Vds Drain Source Breakdown Voltage--100 V
Vgs th Gate Source Threshold Voltage--5 V
Rds On Drain Source Resistance--51 mOhms
Qg Gate Charge--8.3 nC
Forward Transconductance Min--8.8 S
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF7665S2TRPBF MOSFET 100V DIGITAL AUDIO 1 N-CH HEXFET
IRF7665S2TRPBF. Nuevo y original
Infineon Technologies
Infineon Technologies
IRF7665S2TR1PBF IGBT Transistors MOSFET MOSFT 100V 14.7A 60mOhm 8.3nC Qg
IRF7665S2TRPBF MOSFET 100V DIGITAL AUDIO 1 N-CH HEXFET
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