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| PartNumber | IRF7476TRPBF | IRF7476 | IRF7476PBF |
| Description | MOSFET MOSFT 12V 15A 8mOhm 26nC | MOSFET N-CH 12V 15A 8-SOIC | IGBT Transistors MOSFET 20V DUAL N-CH HEXFET 8mOhms 26nC |
| Manufacturer | Infineon | - | KEXIN |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 15 A | - | - |
| Rds On Drain Source Resistance | 8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.9 V | - | - |
| Qg Gate Charge | 40 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | Single Quad Drain Triple Source |
| Packaging | Reel | - | Tube |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 N-Channel | - | 2 N-Channel |
| Width | 3.9 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 31 S | - | - |
| Fall Time | 8.3 ns | - | 8.3 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 29 ns | - | 29 ns |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001554312 | - | - |
| Unit Weight | 0.019048 oz | - | 0.019048 oz |
| Package Case | - | - | SOIC-8 |
| Pd Power Dissipation | - | - | 2.5 W |
| Minimum Operating Temperature | - | - | - 55 C |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 15 A |
| Vds Drain Source Breakdown Voltage | - | - | 12 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.9 V |
| Rds On Drain Source Resistance | - | - | 8 mOhms |
| Typical Turn Off Delay Time | - | - | 19 ns |
| Typical Turn On Delay Time | - | - | 11 ns |
| Qg Gate Charge | - | - | 26 nC |
| Forward Transconductance Min | - | - | 31 S |
| Channel Mode | - | - | Enhancement |