IRF7459

IRF7459PBF vs IRF7459 vs IRF7459TR

 
PartNumberIRF7459PBFIRF7459IRF7459TR
DescriptionMOSFET 20V 1 N-CH HEXFET 9mOhms 23nCMOSFET N-CH 20V 12A 8-SOICMOSFET N-CH 20V 12A 8-SOIC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance11 mOhms--
Vgs Gate Source Voltage12 V--
Qg Gate Charge23 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel--
TypeSmps MOSFET--
Width3.9 mm--
BrandInfineon / IR--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time4.5 ns--
Factory Pack Quantity4085--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesSP001572154--
Unit Weight0.019048 oz--
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF7459TRPBF MOSFET MOSFT 20V 10A 9mOhm 23nC
IRF7459PBF MOSFET 20V 1 N-CH HEXFET 9mOhms 23nC
Infineon Technologies
Infineon Technologies
IRF7459 MOSFET N-CH 20V 12A 8-SOIC
IRF7459PBF MOSFET N-CH 20V 12A 8-SOIC
IRF7459TR MOSFET N-CH 20V 12A 8-SOIC
IRF7459TRPBF MOSFET N-CH 20V 12A 8-SOIC
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