PartNumber | IRF7379QTRPBF | IRF7379PBF | IRF7379 |
Description | MOSFET AUTO HEXFET SO-8 | MOSFET 30V DUAL N / P CH 20V VGS MAX | MOSFET N/P-CH 30V 8-SOIC |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 5.8 A | 5.8 A | - |
Rds On Drain Source Resistance | 75 mOhms | 75 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 16.7 nC | 16.7 nC | - |
Pd Power Dissipation | 2.5 W | 2.5 W | - |
Configuration | Dual | Dual | - |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | - |
Width | 3.9 mm | 3.9 mm | - |
Brand | Infineon / IR | Infineon / IR | - |
Product Type | MOSFET | MOSFET | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.019048 oz | 0.019048 oz | - |
RoHS | - | Y | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Channel Mode | - | Enhancement | - |
Packaging | - | Tube | - |
Type | - | Power MOSFET | - |
Fall Time | - | 7.7 ns, 18 ns | - |
Rise Time | - | 21 ns, 17 ns | - |
Factory Pack Quantity | - | 95 | - |
Typical Turn Off Delay Time | - | 22 ns, 25 ns | - |
Typical Turn On Delay Time | - | 6.8 ns, 11 ns | - |
Part # Aliases | - | SP001555260 | - |