PartNumber | IRF7103QTRPBF | IRF7103Q | IRF7103QPBF |
Description | MOSFET AUTO HEXFET SO-8 | MOSFET 2N-CH 50V 3A 8-SOIC | MOSFET, Power, Dual N-Ch, VDSS 50V, RDS(ON) 200 Milliohms, ID 1.5A, SO-8, PD 2.4W |
Manufacturer | Infineon | Infineon Technologies | IR |
Product Category | MOSFET | FETs - Arrays | IC Chips |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SO-8 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 50 V | - | - |
Id Continuous Drain Current | 3 A | - | - |
Rds On Drain Source Resistance | 200 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 10 nC | - | - |
Pd Power Dissipation | 2.4 W | - | - |
Configuration | Dual | - | - |
Height | 1.75 mm | - | - |
Length | 4.9 mm | - | - |
Transistor Type | 2 N-Channel | - | - |
Width | 3.9 mm | - | - |
Brand | Infineon / IR | - | - |
Product Type | MOSFET | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.019048 oz | - | - |
Series | - | HEXFETR | - |
Packaging | - | Tube | - |
Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | 8-SO | - |
FET Type | - | 2 N-Channel (Dual) | - |
Power Max | - | 2.4W | - |
Drain to Source Voltage Vdss | - | 50V | - |
Input Capacitance Ciss Vds | - | 255pF @ 25V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 3A | - |
Rds On Max Id Vgs | - | 130 mOhm @ 3A, 10V | - |
Vgs th Max Id | - | 3V @ 250μA | - |
Gate Charge Qg Vgs | - | 15nC @ 10V | - |