IRF7103Q

IRF7103QTRPBF vs IRF7103Q vs IRF7103QPBF

 
PartNumberIRF7103QTRPBFIRF7103QIRF7103QPBF
DescriptionMOSFET AUTO HEXFET SO-8MOSFET 2N-CH 50V 3A 8-SOICMOSFET, Power, Dual N-Ch, VDSS 50V, RDS(ON) 200 Milliohms, ID 1.5A, SO-8, PD 2.4W
ManufacturerInfineonInfineon TechnologiesIR
Product CategoryMOSFETFETs - ArraysIC Chips
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance200 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge10 nC--
Pd Power Dissipation2.4 W--
ConfigurationDual--
Height1.75 mm--
Length4.9 mm--
Transistor Type2 N-Channel--
Width3.9 mm--
BrandInfineon / IR--
Product TypeMOSFET--
SubcategoryMOSFETs--
Unit Weight0.019048 oz--
Series-HEXFETR-
Packaging-Tube-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SO-
FET Type-2 N-Channel (Dual)-
Power Max-2.4W-
Drain to Source Voltage Vdss-50V-
Input Capacitance Ciss Vds-255pF @ 25V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-3A-
Rds On Max Id Vgs-130 mOhm @ 3A, 10V-
Vgs th Max Id-3V @ 250μA-
Gate Charge Qg Vgs-15nC @ 10V-
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF7103QTRPBF MOSFET AUTO HEXFET SO-8
Infineon Technologies
Infineon Technologies
IRF7103Q MOSFET 2N-CH 50V 3A 8-SOIC
IRF7103QTRPBF MOSFET 2N-CH 50V 3A 8-SOIC
IRF7103QPBF MOSFET, Power, Dual N-Ch, VDSS 50V, RDS(ON) 200 Milliohms, ID 1.5A, SO-8, PD 2.4W
IRF7103QTRPBF. Nuevo y original
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