 | | |
| PartNumber | IRF6662TRPBF | IRF6662TR1PBF |
| Description | MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ | MOSFET MOSFT 100V 47A 22mOhm 22nC Qg |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DirectFET-MZ | DirectFET-MZ |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 8.3 A | 8.3 A |
| Rds On Drain Source Resistance | 17.5 mOhms | 17.5 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 22 nC | 22 nC |
| Minimum Operating Temperature | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 89 W | 89 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | DirectFET | - |
| Packaging | Reel | Reel |
| Height | 0.7 mm | 0.7 mm |
| Length | 6.35 mm | 6.35 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 5.05 mm | 5.05 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Fall Time | 5.9 ns | 5.9 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7.5 ns | 7.5 ns |
| Factory Pack Quantity | 4800 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 24 ns | - |
| Typical Turn On Delay Time | 11 ns | - |
| Part # Aliases | SP001576850 | SP001559718 |
| Vgs th Gate Source Threshold Voltage | - | 4.9 V |
| Forward Transconductance Min | - | 11 S |
| Moisture Sensitive | - | Yes |
| Unit Weight | - | 0.035274 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF6662TRPBF | MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ | |
| IRF6662TR1PBF | MOSFET N-CH 100V 8.3A DIRECTFET | ||
| IRF6662TRPBF | MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ | ||
Infineon / IR |
IRF6662TR1PBF | MOSFET MOSFT 100V 47A 22mOhm 22nC Qg | |
| IRF6662TRPBF. | Nuevo y original |