 |  | | |
| PartNumber | IRF6655TRPBF | IRF6655TR1 | IRF6655TR1PBF |
| Description | MOSFET 100V 1 N-CH HEXFET DIRECTFET SH | MOSFET N-CH 100V DIRECTFET-SH | MOSFET N-CH 100V 4.2A DIRECTFET |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DirectFET-SH | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 4.2 A | - | - |
| Rds On Drain Source Resistance | 53 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 8.7 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 42 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.7 mm | - | - |
| Length | 4.85 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.95 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 4.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.8 ns | - | - |
| Factory Pack Quantity | 4800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 14 ns | - | - |
| Typical Turn On Delay Time | 7.4 ns | - | - |
| Part # Aliases | SP001562060 | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF6655TRPBF | MOSFET 100V 1 N-CH HEXFET DIRECTFET SH | |
| IRF6655TR1 | MOSFET N-CH 100V DIRECTFET-SH | ||
| IRF6655TR1PBF | MOSFET N-CH 100V 4.2A DIRECTFET | ||
| IRF6655TRPBF | IGBT Transistors MOSFET 100V 1 N-CH HEXFET DIRECTFET SH | ||
| IRF6655TR1PBF. | MOSFET | ||
| IRF6655 | Nuevo y original |