IRF6643

IRF6643TRPBF vs IRF6643TRPBF-CUT TAPE vs IRF6643TR1PBF

 
PartNumberIRF6643TRPBFIRF6643TRPBF-CUT TAPEIRF6643TR1PBF
DescriptionMOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nCIGBT Transistors MOSFET MOSFT 150V 35A 35mOhm 39nC Qg
ManufacturerInfineon-International Rectifier
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseDirectFET-MZ--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current6.2 A--
Rds On Drain Source Resistance29 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge39 nC--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation89 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
TradenameDirectFET--
PackagingReel-Reel
Height0.7 mm--
Length6.35 mm--
Transistor Type1 N-Channel-1 N-Channel
Width5.05 mm--
BrandInfineon / IR--
Forward Transconductance Min16 S--
Fall Time4.4 ns-4.4 ns
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time5 ns-5 ns
Factory Pack Quantity4800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time9.2 ns--
Part # AliasesSP001570070--
Package Case--DirectFET-7
Pd Power Dissipation--89 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--6.2 A
Vds Drain Source Breakdown Voltage--150 V
Vgs th Gate Source Threshold Voltage--4.9 V
Rds On Drain Source Resistance--29 mOhms
Qg Gate Charge--39 nC
Forward Transconductance Min--16 S
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF6643TRPBF MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC
IRF6643TRPBF-CUT TAPE Nuevo y original
Infineon Technologies
Infineon Technologies
IRF6643TRPBF MOSFET N-CH 150V 6.2A DIRECTFET
IRF6643TR1PBF IGBT Transistors MOSFET MOSFT 150V 35A 35mOhm 39nC Qg
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