IRF6612

IRF6612TR1PBF vs IRF6612TR1 vs IRF6612TRPBF

 
PartNumberIRF6612TR1PBFIRF6612TR1IRF6612TRPBF
DescriptionMOSFET 30V 1 N-CH HEXFET DIRECTFET MXMOSFET 30V 1 N-CH HEXFET DIRECTFET MXMOSFET 30V 1 N-CH HEXFET DIRECTFET MX
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDirectFET-MXDirectFET-MX-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current24 A24 A-
Rds On Drain Source Resistance4.4 mOhms3.3 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge30 nC--
Pd Power Dissipation89 W89 W-
ConfigurationSingleSingle-
PackagingReelReel-
Height0.7 mm0.7 mm-
Length6.35 mm6.35 mm-
Transistor Type1 N-Channel1 N-Channel-
Width5.05 mm5.05 mm-
BrandInfineon / IRInfineon / IR-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001530082SP001530704-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Type-DirectFET Power MOSFET-
Fall Time-4.8 ns-
Rise Time-52 ns-
Typical Turn Off Delay Time-21 ns-
Typical Turn On Delay Time-15 ns-
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF6612TR1PBF MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
IRF6612TR1 MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
Infineon Technologies
Infineon Technologies
IRF6612TR1 MOSFET N-CH 30V 24A DIRECTFET
IRF6612TR1PBF MOSFET N-CH 30V 24A DIRECTFET
IRF6612TRPBF MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
IRF6612 MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
IRF6612TR Nuevo y original
IRF6612TRPBF. Nuevo y original
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