 |  | | |
| PartNumber | IRF640NSTRLPBF | IRF640NSTRL | IRF640NSTRLPBF STB19NF |
| Description | MOSFET MOSFT 200V 18A 150mOhm 44.7nC | HEXFET N-CH MOSFET 18A 200V D2PAK, PK | |
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263AB-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 18 A | - | - |
| Rds On Drain Source Resistance | 150 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 44.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 6.8 S | - | - |
| Fall Time | 5.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 19 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SP001561810 | - | - |
| Unit Weight | 0.070548 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF640NSTRLPBF | MOSFET MOSFT 200V 18A 150mOhm 44.7nC | |
| IRF640NSTRLPBF | MOSFET N-CH 200V 18A D2PAK | ||
| IRF640NSTRLPBF-CUT TAPE | Nuevo y original | ||
| IRF640NSTRL | HEXFET N-CH MOSFET 18A 200V D2PAK, PK | ||
| IRF640NSTRLPBF STB19NF | Nuevo y original | ||
| IRF640NSTRLPBF,IRF640NS, | Nuevo y original | ||
| IRF640NSTRLPBF,IRF640NST | Nuevo y original | ||
| IRF640NSTRLPBF,IRF640STR | Nuevo y original |